DatasheetsPDF.com

BZA408B Dataheets PDF



Part Number BZA408B
Manufacturers NXP
Logo NXP
Description Quadruple bidirectional ESD transient voltage suppressor
Datasheet BZA408B DatasheetBZA408B Datasheet (PDF)

DATA SHEET dbook, halfpage M3D302 BZA408B Quadruple bidirectional ESD transient voltage suppressor Product data sheet Supersedes data of 1998 Jun 05 1998 Oct 15 NXP Semiconductors Quadruple bidirectional ESD transient voltage suppressor Product data sheet BZA408B FEATURES • ESD rating >15 kV, according to IEC1000-4-2 • SOT457 surface mount package • Non-clamping range: −5 V to +5 V • Channel separation: >70 dB • Low reverse current: <100 nA • Low diode capacitance: <75 pF. PINNING PIN 1.

  BZA408B   BZA408B



Document
DATA SHEET dbook, halfpage M3D302 BZA408B Quadruple bidirectional ESD transient voltage suppressor Product data sheet Supersedes data of 1998 Jun 05 1998 Oct 15 NXP Semiconductors Quadruple bidirectional ESD transient voltage suppressor Product data sheet BZA408B FEATURES • ESD rating >15 kV, according to IEC1000-4-2 • SOT457 surface mount package • Non-clamping range: −5 V to +5 V • Channel separation: >70 dB • Low reverse current: <100 nA • Low diode capacitance: <75 pF. PINNING PIN 1 2, 5 3 4 6 cathode 1 ground cathode 2 cathode 3 cathode 4 DESCRIPTION APPLICATIONS • Protection of equipment, connected to data and transmission lines, against voltage surges caused by electrostatic discharge e.g: – Computers and peripherals – Audio and video equipment – Communication systems – Medical equipment – Portable electronics. DESCRIPTION 4-bit wide monolithic bidirectional ESD transient voltage suppressor in a six lead SOT457 (SC-74) package. handbook, halfpage 654 654 1 Top view 2 3 12 3 MAM409 Marking code: Z8. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Per diode (pin 2 and / or 5 connected to ground) IZSM PZSM Tstg Tj non-repetitive peak reverse current non-repetitive peak power storage temperature junction temperature tp = 1 ms; square pulse; see Fig.2 tp = 1 ms; square pulse MIN. − − −65 −65 MAX. UNIT 2 20 +150 +150 A W °C °C 1998 Oct 15 2 NXP Semiconductors Quadruple bidirectional ESD transient voltage suppressor Product data sheet BZA408B THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-s thermal resistance from junction to soldering point one or more diodes loaded VALUE 340 UNIT K/W ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode (pin 2 and / or 5 connected to ground) VRWM VR VZSM IR Cd αch (p to p) working reverse voltage reverse voltage non-repetitive peak reverse voltage reverse current diode capacitance pin to pin channel separation Itest = 5 mA tp = 1 ms; IZSM = 2 A VR = VRWM see Fig.3 VR = 0; f = 1 MHz VR = 5 V; f = 1 MHz note 1; see Fig.4 −5V 5.5 − V − 10 V − 100 nA − 75 pF − 55 pF 70 − dB Note 1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of 1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz signal the same measurement is done in the opposite way. 1998 Oct 15 3 NXP Semiconductors Quadruple bidirectional ESD transient voltage suppressor GRAPHICAL DATA 10 handbook, halfpage IZSM (A) 1 MGR557 handbook,8h0alfpage Cd (pF) 60 40 Product data sheet BZA408B MGR558 10−1 10−2 10−1 1 tp (ms) 10 Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. 20 0 1 2 3 4 VR (V) 5 Tj = 25 °C; f = 1 MHz. Fig.3 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth SIGNAL GENERATOR 600 Ω f = 1 kHz −7 dBs coaxial cable with SMB connector SPECTRUM ANALYZER 1 MΩ DUT 16 25 34 SIGNAL GENERATOR 600 Ω f = 400 Hz −7 dBs MGR556 1998 Oct 15 Fig.4 Channel separation measurement setup. 4 NXP Semiconductors Quadruple bidirectional ESD transient voltage suppressor Product data sheet BZA408B handbook, full pagewidthESD TESTER RZ CZ 450 Ω RG 223/U 50 Ω coax 10× ATTENUATOR note 1 DIGITIZING OSCILLOSCOPE 50 Ω IEC1000-4-2 network CZ = 150 pF; RZ = 330 Ω 1/4 BZA408B vertical scale = 100 V/Div horizontal scale = 50 ns/Div Note 1: attenuator is only used for open socket high voltage measurements vertical scale = 10 V/Div horizontal scale = 50 ns/Div GND unclamped +1 kV ESD voltage waveform (IEC1000-4-2 network) GND GND clamped +1 kV ESD voltage waveform (IEC1000-4-2 network) GND vertical scale = 100 V/Div horizontal scale = 50 ns/Div unclamped −1 kV ESD voltage waveform (IEC1000-4-2 network) vertical scale = 10 V/Div horizontal scale = 50 ns/Div clamped −1 kV ESD voltage waveform (IEC1000-4-2 network) MGR560 Fig.5 ESD clamping test set-up and waveforms. 1998 Oct 15 5 NXP Semiconductors Quadruple bidirectional ESD transient voltage suppressor Product data sheet BZA408B APPLICATION INFORMATION Typical bidirectional application A quadruple bidirectional transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one package. One simplified example is shown in Fig.6. handbook, full pagewidth audio in L audio in R audio out L audio out R SCART CONNECTOR TVSET/VCR BZA408B GND MGR559 Fig.6 Scart connector protection. Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA408B is determined by the peak transient.


BZA109TS BZA408B BZA420A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)