Document
DATA SHEET
dbook, halfpage
M3D302
BZA408B Quadruple bidirectional ESD transient voltage suppressor
Product data sheet Supersedes data of 1998 Jun 05
1998 Oct 15
NXP Semiconductors
Quadruple bidirectional ESD transient voltage suppressor
Product data sheet
BZA408B
FEATURES
• ESD rating >15 kV, according to IEC1000-4-2 • SOT457 surface mount package • Non-clamping range: −5 V to +5 V • Channel separation: >70 dB • Low reverse current: <100 nA • Low diode capacitance: <75 pF.
PINNING
PIN 1
2, 5 3 4 6
cathode 1 ground cathode 2 cathode 3 cathode 4
DESCRIPTION
APPLICATIONS • Protection of equipment, connected to data and
transmission lines, against voltage surges caused by electrostatic discharge e.g: – Computers and peripherals – Audio and video equipment – Communication systems – Medical equipment – Portable electronics.
DESCRIPTION
4-bit wide monolithic bidirectional ESD transient voltage suppressor in a six lead SOT457 (SC-74) package.
handbook, halfpage
654
654
1 Top view
2
3
12 3
MAM409
Marking code: Z8.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode (pin 2 and / or 5 connected to ground)
IZSM PZSM Tstg Tj
non-repetitive peak reverse current non-repetitive peak power storage temperature junction temperature
tp = 1 ms; square pulse; see Fig.2 tp = 1 ms; square pulse
MIN.
− − −65 −65
MAX. UNIT
2 20 +150 +150
A W °C °C
1998 Oct 15
2
NXP Semiconductors
Quadruple bidirectional ESD transient voltage suppressor
Product data sheet
BZA408B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point one or more diodes loaded
VALUE 340
UNIT K/W
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (pin 2 and / or 5 connected to ground)
VRWM VR VZSM IR Cd
αch (p to p)
working reverse voltage reverse voltage non-repetitive peak reverse voltage reverse current diode capacitance
pin to pin channel separation
Itest = 5 mA tp = 1 ms; IZSM = 2 A VR = VRWM see Fig.3
VR = 0; f = 1 MHz VR = 5 V; f = 1 MHz note 1; see Fig.4
−5V
5.5 −
V
− 10 V
− 100 nA
− 75 pF
− 55 pF
70 −
dB
Note
1. αch (p to p) is measured as follows: a −7 dBs sinewave of 400 Hz is connected to e.g. pin 6 and a −7 dBs sinewave of 1 kHz to pin 1. The 1 kHz signal of pin 1 is measured on pin 6 by means of a spectrum analyser with an input impedance of 1 MΩ. So αch (p to p) equals the 1 kHz level on pin 1 minus the 1 kHz level on pin 6. For the 400 Hz signal the same measurement is done in the opposite way.
1998 Oct 15
3
NXP Semiconductors
Quadruple bidirectional ESD transient voltage suppressor
GRAPHICAL DATA
10
handbook, halfpage
IZSM (A)
1
MGR557
handbook,8h0alfpage Cd (pF) 60
40
Product data sheet
BZA408B
MGR558
10−1 10−2
10−1
1 tp (ms) 10
Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time.
20 0 1 2 3 4 VR (V) 5
Tj = 25 °C; f = 1 MHz.
Fig.3 Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth
SIGNAL GENERATOR
600 Ω f = 1 kHz −7 dBs
coaxial cable with SMB connector
SPECTRUM ANALYZER
1 MΩ
DUT 16
25
34
SIGNAL GENERATOR
600 Ω
f = 400 Hz −7 dBs
MGR556
1998 Oct 15
Fig.4 Channel separation measurement setup. 4
NXP Semiconductors
Quadruple bidirectional ESD transient voltage suppressor
Product data sheet
BZA408B
handbook, full pagewidthESD TESTER RZ
CZ
450 Ω
RG 223/U 50 Ω coax
10× ATTENUATOR
note 1
DIGITIZING OSCILLOSCOPE
50 Ω
IEC1000-4-2 network CZ = 150 pF; RZ = 330 Ω
1/4 BZA408B
vertical scale = 100 V/Div horizontal scale = 50 ns/Div
Note 1: attenuator is only used for open socket high voltage measurements
vertical scale = 10 V/Div horizontal scale = 50 ns/Div
GND unclamped +1 kV ESD voltage waveform (IEC1000-4-2 network)
GND
GND
clamped +1 kV ESD voltage waveform (IEC1000-4-2 network)
GND
vertical scale = 100 V/Div horizontal scale = 50 ns/Div
unclamped −1 kV ESD voltage waveform (IEC1000-4-2 network)
vertical scale = 10 V/Div horizontal scale = 50 ns/Div
clamped −1 kV ESD voltage waveform (IEC1000-4-2 network)
MGR560
Fig.5 ESD clamping test set-up and waveforms.
1998 Oct 15
5
NXP Semiconductors
Quadruple bidirectional ESD transient voltage suppressor
Product data sheet
BZA408B
APPLICATION INFORMATION
Typical bidirectional application
A quadruple bidirectional transient suppressor in a SOT457 package makes it possible to protect four separate lines using only one package. One simplified example is shown in Fig.6.
handbook, full pagewidth
audio in L audio in R audio out L audio out R
SCART CONNECTOR
TVSET/VCR
BZA408B
GND
MGR559
Fig.6 Scart connector protection.
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA408B is determined by the peak transient.