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BYZ50K47 Dataheets PDF



Part Number BYZ50K47
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Silicon Protectifiers
Datasheet BYZ50K47 DatasheetBYZ50K47 Datasheet (PDF)

BYZ 50A22 ... BYZ 50A47 BYZ 50K22 ... BYZ 50K47 Silicon Protectifiers with TVS characteristics High-temperature diodes Silizium Schutzgleichrichter mit Begrenzereigenschaften Hochtemperaturdioden Ø 12.75 Ø 11 ±0.1 Nominal current – Nennstrom Nominal breakdown voltage Nominale Abbruch-Spannung Rändel 0.8 knurl 0.8 50 A 19.8 ... 51.7 V 28.5 ±0.5 1.3 Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx. – Gewicht ca. Casting compound has UL classif.

  BYZ50K47   BYZ50K47


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BYZ 50A22 ... BYZ 50A47 BYZ 50K22 ... BYZ 50K47 Silicon Protectifiers with TVS characteristics High-temperature diodes Silizium Schutzgleichrichter mit Begrenzereigenschaften Hochtemperaturdioden Ø 12.75 Ø 11 ±0.1 Nominal current – Nennstrom Nominal breakdown voltage Nominale Abbruch-Spannung Rändel 0.8 knurl 0.8 50 A 19.8 ... 51.7 V 28.5 ±0.5 1.3 Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx. – Gewicht ca. Casting compound has UL classification 94V-0 Vergußmasse UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 10 g Ø 13 ±01 Dimensions / Maße in mm Maximum ratings Type / Typ Wire to / Draht an Anode BYZ 50A22 BYZ 50A27 BYZ 50A33 BYZ 50A39 BYZ 50A47 Cathode BYZ 50K22 BYZ 50K27 BYZ 50K33 BYZ 50K39 BYZ 50K47 Breakdown voltage Abbruch-Spannung IT = 100 mA VBRmin [V] VBRmax 19.8 24.3 29.7 35.1 42.3 24.2 29.7 36.3 42.9 51.7 Reverse voltage Sperrspannung IR = 5 :A VR [V] > 17.8 > 21.8 > 26.8 > 31.6 > 38.1 5 ±0.2 10.7 ±0.2 Grenzwerte Max. clamping voltage Max. Begrenzerspanng. at / bei IPP, tp = 1m s VC [V] IPP [A] 31,9 39,1 47,7 56,4 67,8 242 192 160 134 112 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Forward voltage – Durchlaßspannung Tj = 25/C TC = 150/C TA = 25/C TA = 25/C IF = 50 A IFAV IFSM i2t VF Tj TS 50 A 400 / 450 A 800 A2s < 1.1 V – 50…+215/C – 50…+215/C Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 04.09.2002 1 BYZ 50A22 ... BYZ 50A47 BYZ 50K22 ... BYZ 50K47 Max. junction temperature in case of “Load Dump” Max. Sperrschichttemperatur bei “Load Dump” Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse Maximum pressure – Maximaler Einpreßdruck Tjmax RthC +280/C < 0.6 K/W 7 kN 2 F:\Data\WP\DatBlatt\Einzelblätter\byz50a22-k47.wpd .


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