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BYZ35A39

Diotec Semiconductor

Silicon Protectifiers with TVS characteristics High-temperature diodes

BYZ 35A22 ... BYZ 35A47 BYZ 35K22 ... BYZ 35K47 Silicon Protectifiers with TVS characteristics High-temperature diodes S...



BYZ35A39

Diotec Semiconductor


Octopart Stock #: O-116994

Findchips Stock #: 116994-F

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BYZ 35A22 ... BYZ 35A47 BYZ 35K22 ... BYZ 35K47 Silicon Protectifiers with TVS characteristics High-temperature diodes Silizium Schutzgleichrichter mit Begrenzereigenschaften Hochtemperaturdioden Ø 12.75 Ø 11 ±0.1 Nominal current – Nennstrom Nominal breakdown voltage Nominale Abbruch-Spannung Rändel 0.8 knurl 0.8 35 A 19.8 ... 51.7 V 28.5 ±0.5 1.3 Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx. – Gewicht ca. Casting compound has UL classification 94V-0 Vergußmasse UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 10 g Ø 13 ±01 Dimensions / Maße in mm Maximum ratings Type / Typ Wire to / Draht an Anode BYZ 35A22 BYZ 35A27 BYZ 35A33 BYZ 35A39 BYZ 35A47 Cathode BYZ 35K22 BYZ 35K27 BYZ 35K33 BYZ 35K39 BYZ 35K47 Breakdown voltage Abbruch-Spannung IT = 100 mA VBRmin [V] VBRmax 19.8 24.3 29.7 35.1 42.3 24.2 29.7 36.3 42.9 51.7 Reverse voltage Sperrspannung IR = 5 :A VR [V] > 17.8 > 21.8 > 26.8 > 31.6 > 38.1 5 ±0.2 10.7 ±0.2 Grenzwerte Max. clamping voltage Max. Begrenzerspanng. at / bei IPP, tp = 1m s VC [V] IPP [A] 31,9 39,1 47,7 56,4 67,8 161 128 106 89 75 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150/C IFAV IFSM i2t VF Tj TS 35 A 360 / 400 A 660 A2s < 1.1 V – 50…+215/C – 50…+215/C Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing, t <10 ms Grenzlastintegral,...




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