High-voltage car ignition diode
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D350
BYX134GPS High-voltage car ignition diode
Product specification 2000 Jan 13
...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D350
BYX134GPS High-voltage car ignition diode
Product specification 2000 Jan 13
Philips Semiconductors
Product specification
High-voltage car ignition diode
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability. APPLICATIONS Car ignition systems Automotive applications with extreme temperature requirements. DESCRIPTION
BYX134GPS
Rugged glass package, using a high temperature alloyed construction. The SOD118A is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas.
k halfpage handbook,
a
MAM402
Cathode indicated by a blue band.
Fig.1 Simplified outline (SOD118A) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM IF(AV) IRSM Tstg Tj PARAMETER repetitive peak reverse voltage crest working reverse voltage average forward current non-repetitive peak reverse current storage temperature junction temperature continuous t = 100 µs triangular pulse; Tj max prior to surge CONDITIONS − − − − −65 − MIN. 4 4 50 50 175 175 MAX. UNIT kV kV mA mA °C °C
CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 10 mA IR = 100 µA VR = ...
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