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BYX104G

NXP

High-voltage soft-recovery controlled avalanche rectifiers

DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled av...


NXP

BYX104G

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DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Recovery times ranging from 600 to 50 ns Soft-recovery switching characteristics Compact construction. APPLICATIONS High-voltage power supply units in, for example, X-ray or radar systems. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. handbook, halfpage BYX101G; BYX102G; BYX103G; BYX104G k a MSB026 Fig.1 Simplified outline (SOD88A) and symbol. MARKING TYPE NUMBER BYX101G BYX102G BYX103G BYX104G red green violet CATHODE BAND black LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRW IF(AV) PARAMETER repetitive peak reverse voltage working reverse voltage average forward current BYX101G BYX102G BYX103G BYX104G average forward current BYX101G BYX102G BYX103G BYX104G IFSM non-repetitive peak forward current BYX101G BYX102G BYX103...




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