DatasheetsPDF.com

BYW29ED-150 Dataheets PDF



Part Number BYW29ED-150
Manufacturers NXP
Logo NXP
Description Rectifier diodes ultrafast/ rugged
Datasheet BYW29ED-150 DatasheetBYW29ED-150 Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYW29EB, BYW29ED series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.895 V IF(AV) = 8 A IRRM = 0.2 A trr ≤ 25 ns k tab a 3 GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequenc.

  BYW29ED-150   BYW29ED-150



Document
Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYW29EB, BYW29ED series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.895 V IF(AV) = 8 A IRRM = 0.2 A trr ≤ 25 ns k tab a 3 GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYW29EB series is supplied in the SOT404 surface mounting package. The BYW29ED series is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION no connection cathode1 anode cathode SOT404 tab SOT428 tab 2 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Peak non-repetitive reverse surge current Operating junction temperature Storage temperature square wave; δ = 0.5; Tmb ≤ 128 ˚C square wave; δ = 0.5; Tmb ≤ 128 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 µs; δ = 0.001 tp = 100 µs CONDITIONS BYW29EB/ BYW29ED - 40 MIN. -150 150 150 150 8 16 80 88 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C 1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. November 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ BYW29EB, BYW29ED series MIN. - MAX. 8 UNIT kV THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT404 and SOT428 packages, pcb mounted, minimum footprint, FR4 board TYP. MAX. UNIT 50 2.7 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Qrr trr1 trr2 Vfr Forward voltage Reverse current Reverse recovered charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRWM VR = VRWM; Tj = 100˚C IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs MIN. TYP. MAX. UNIT 0.8 0.92 1.1 2 0.2 4 20 15 1 0.895 1.05 1.3 10 0.6 11 25 20 V V V µA mA nC ns ns V November 1998 2 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYW29EB, BYW29ED series I dI F dt F 0.5A IF t rr time 0A I rec = 0.25A IR trr2 Q I R I s 10% 100% rrm I = 1A R Fig.1. Defi.


BYW29ED BYW29ED-150 BYW29ED-200


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)