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BYW29EB

NXP

Rectifier diodes ultrafast/ rugged

DISCRETE SEMICONDUCTORS DATA SHEET BYW29EB, BYW29ED series Rectifier diodes ultrafast, rugged Product specification N...


NXP

BYW29EB

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DISCRETE SEMICONDUCTORS DATA SHEET BYW29EB, BYW29ED series Rectifier diodes ultrafast, rugged Product specification November 1998 NXP Semiconductors Rectifier diodes ultrafast, rugged Product specification BYW29EB, BYW29ED series FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance SYMBOL k tab QUICK REFERENCE DATA VR = 150 V/ 200 V a VF ≤ 0.895 V 3 IF(AV) = 8 A IRRM = 0.2 A trr ≤ 25 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYW29EB series is supplied in the SOT404 surface mounting package. The BYW29ED series is supplied in the SOT428 surface mounting package. PINNING SOT404 SOT428 PIN DESCRIPTION tab tab 1 no connection 2 cathode1 3 anode tab cathode 2 13 2 13 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. VRRM VRWM VR IF(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Peak non-repetitive reverse surge current Operating junction temperature Storage temperature BYW29EB/ BYW29ED square wave; δ = 0.5; Tmb ≤ 128 ˚C square wave; δ = 0.5; Tmb ≤ 128 ...




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