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BYW29E

NXP

Rectifier diodes ultrafast/ rugged

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fas...


NXP

BYW29E

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Description
Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance BYW29E series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.895 V IF(AV) = 8 A IRRM ≤ 0.2 A trr ≤ 25 ns k 1 a 2 GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYW29E series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Peak non-repetitive reverse surge current Operating junction temperature Storage temperature square wave; δ = 0.5; Tmb ≤ 128 ˚C square wave; δ = 0.5; Tmb ≤ 128 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 µs; δ = 0.001 tp = 100 µs CONDITIONS BYW29E - 40 MIN. -150 150 150 150 8 16 80 88 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic di...




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