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BYW27-400

EIC discrete Semiconductors

SILICON RECTIFIERS

BYW27-50 - BYW27-1000 SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Amperes FEATURES : * * * * * High current capabi...


EIC discrete Semiconductors

BYW27-400

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Description
BYW27-50 - BYW27-1000 SILICON RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. DO - 41 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 70°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 Amp. Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : SYMBOL VRRM VRMS VDC IF BYW BYW BYW BYW BYW BYW BYW 27-50 27-100 27-200 27-400 27-600 27-800 27-100 UNIT Volts Volts Volts Amp. 50 35 50 ...




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