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BYW100-200

STMicroelectronics

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE

® BYW100-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) ...


STMicroelectronics

BYW100-200

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® BYW100-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 1.5 A 200 V 150 °C 0.85 V FEATURES AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS F126 (JEDEC DO-204AC) DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values) Symbol VRRM IFRM IF(AV) IFSM Tstg Tj TL Parameter Repetitive peak reverse voltage Repetitive peak forward current * Average forward current * Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s at 4mm from case tp = 5 µs F = 1KHz Ta = 95°C δ = 0.5 tp=10 ms sinusoidal Value 200 80 1.5 50 -65 +150 + 150 230 Unit V A A A °C °C °C * On infinite heatsink with 10mm lead length. October 1999 - Ed: 3A 1/5 BYW100-200 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient * Parameter Value 45 Unit °C/W * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = VRRM Tj = 25°C Tj = 100°C IF = 4.5 A IF = 1.5 A Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Min. Typ. Max. 10 0.5 1.2 Unit µA mA V VF ** Tj = 25°C Tj = 100°C 0.78 ...




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