BYV99

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV99 Ultra fast low-loss controlled avalanche rectifier Product specification Supersedes data of May 1993 1996 Feb 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier FEATURES Glass passivated Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. BYV99 This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current  a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS − − Ttp = 50 °C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig. 6 Tamb = 60 °C; PCB mounting (see Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 − MIN. MAX. 600 600 1.00 V V A UNIT − 0.55 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 50 °C; see Fig. 4 Tamb = 60 °C; see Fig. 5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − − − 9 5 20 A A A ERSM Tstg Tj non-repetitive peak...