Rectifier diodes ultrafast/ rugged
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
• Low forward volt drop • Fas...
Description
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance
BYV79EB series
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF ≤ 0.9 V IF(AV) = 14 A IRRM = 0.2 A trr ≤ 30 ns
k tab
a 3
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV79EB series is supplied in the surface mounting SOT404 package.
PINNING
PIN 1 2 3 tab DESCRIPTION no connection cathode 1 anode
SOT404
tab
2
cathode
1 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified forward current 2 Repetitive peak forward current per diode Non-repetitive peak forward current CONDITIONS BYV79EB Tmb ≤ 145˚C -40 MIN. -150 150 150 150 14 28 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C
IRRM IRSM Tstg Tj
square wave δ = 0.5; Tmb ≤ 120 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 120 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature
1. It is not possible to make connect...
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