Rectifier diodes ultrafast/ rugged
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
• Low forward volt drop • Fas...
Description
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance
BYV79E series
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF ≤ 0.9 V IF(AV) = 14 A IRRM ≤ 0.2 A trr ≤ 30 ns
k 1
a 2
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV79E series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current
1
CONDITIONS BYV79E Tmb ≤ 145˚C
MIN. -40 -150 150 150 150
MAX. -200 200 200 200 14 28 150 160 0.2 0.2 150 150
UNIT V V V A A A A A A ˚C ˚C
IRRM IRSM Tstg Tj
square wave δ = 0.5; Tmb ≤ 120 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 120 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature
1. Neglecting switching and reverse current losses.
ESD ...
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