Document
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated, high efficiency, dual, rectifier diodes in a full pack, plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYV72F series
QUICK REFERENCE DATA
SYMBOL VRRM VF IO(AV) trr PARAMETER BYV72FRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.90 20 28 MAX. 150 150 0.90 20 28 MAX. 200 200 0.90 20 28 UNIT V V A ns
PINNING - SOT199
PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1 1 k2
1 2 3
a2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave; δ = 0.5; Ths ≤ 78 ˚C sinusoidal; a = 1.57; Ths ≤ 78 ˚C t = 25 µs; δ = 0.5; Ths ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 20 20 20 30 150 160 112 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C
IO(RMS) IFRM IFSM
I2t Tstg Tj
1 Ths ≤ 125˚C for thermal stability. 2 Neglecting switching and reverse current losses. October 1994 1 Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. -
BYV72F series
TYP.
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs PARAMETER Thermal resistance junction to heatsink CONDITIONS both diodes conducting with heatsink compound without heatsink compound per diode with heatsink compound without heatsink compound in free air MIN. TYP. 35 MAX. 4.0 8.0 5.0 9.0 UNIT K/W K/W K/W K/W K/W
Rth j-a
Thermal resistance junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 ˚C VR = VRWM MIN. TYP. 0.83 0.95 1.00 0.5 10 MAX. 0.90 1.05 1.20 1 100 UNIT V V V mA µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 10 A; VR ≥ 30 V; -dIF/dt = 50 A/µs; Tj = 100 ˚C IF = 1 A; dIF/dt = 10 A/µs MIN. TYP. 6 20 2 1 MAX. 15 28 2.4 UNIT nC ns A V
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
BYV72F series
I
dI F dt
F
20
PF / W
Vo = 0.705 V Rs = 0.013 Ohms
BYV72
Ths(max) / C
50
a = 1.57
t
15
1.9 2.2 2.8
75
rr time
10 4
100
Q I R I
s
10%
100%
5
125
rrm
0
0
5 IF(AV) / A
10
150 15
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
trr / ns 1000
I
F
IF=20A 100
time
IF=1A
VF V VF time fr
10
1
1
10 dIF/dt (A/us)
100
Fig.2. Definition of Vfr
Fig.5. Maximum trr at Tj = 25 ˚C; per diode
25
PF / W
Vo = 0.7050 V Rs = 0.0130 Ohms
BYV72
Ths(max) / C D = 1.0
25
trr / ns 1000
20 0.5 15 0.1 10
I tp D= tp T
50
IF=20A 100
0.2
75
IF=1A
100
10
5
T t
125
Tj = 100 C
0
0
5
10 15 IF(AV) / A
20
150 25
1
1
10 -dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D.
Fig.6. Maximum trr at Tj = 100 ˚C; per diode
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
BYV72F series
10
Irrm / A
100 Qs / nC
IF=20A
1 IF=1A
IF=20A 10A 5A 2A 1A 10
0.1
0.01 1 10 -dIF/dt (A/us) 100
1.0
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum Irrm at Tj = 25 ˚C; per diode
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
10
IF / A
10
Zth (K/W)
IF=20A 1 IF=1A
1
0.1
0.1
P
D
tp
Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100
0.01 10 us 1 ms 0.1
t
tp / s
10 s
Fig.8. Maximum Irrm at Tj = 100 ˚C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp).
50
IF / A Tj = 150 C
40
Tj = 25 C
30
20 typ 10 max 0 0 0.5 VF / V 1.0 1.5
.