BYT51B

BYT51. Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current Applications Rectifiers 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV IFAV Tj=Tstg Value 50 100 200 400 600 800 1000 50 9 1 1.5 –65...+175 Unit V V V V V V V A A A A °C Peak forward surge current Repetitive peak forward current Average g forward current Junction and storage temperature range tp=10ms, half sinewave on PC board l=10mm, TL=30°C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Document Number 86028 Rev. 3, 24-Jun-98 www.vishay.de FaxBack +1-408-970-5600 1 (4) BYT51. Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1A, Tj=175°C VR=VRRM VR=VRRM, Tj=150°C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR trr Min Typ 0.95 Max 1.1 1.0 1 100 4 Unit V V mA mA ms Characteristics (Tj = 25_C unless otherwise specified) R thJA – Therm. Resist. Junction / Ambient ( K/W ) 120 l 100 80 60 40 20 0 0 5 10 15 20 25 30 94 9405 l I FAV– Average Forward Current ( A ) 2.0 1.6 1.2 0.8 0.4 0 0 40 80 120 160 200 VR ...