Silicon Mesa Rectifier
BYT40Y
Vishay Telefunken
Silicon Mesa Rectifier
Features
D Hermetically sealed axial–leaded
glass envelope
D Glass pas...
Description
BYT40Y
Vishay Telefunken
Silicon Mesa Rectifier
Features
D Hermetically sealed axial–leaded
glass envelope
D Glass passivated D Low reverse current D High reverse voltage
Applications
Electronic ballast and lighting SMPS
95 10526
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage=Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Test Conditions Type Symbol VR=VRRM IFSM IFAV Tj=Tstg Value 1600 25 1 –55...+150 Unit V A A °C
tp=8.3ms, half–sinewave Tamb=40°C, l = 10 mm
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions lead length l= 10mm, TL = constant on PC board with 25mm spacing Symbol RthJA RthJA Value 60 110 Unit K/W K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Reverse recovery time Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=150°C VR=4.0V, f= 1MHz IF=0.5A, IR=1A, iR=0.25A Type Symbol VF IR IR CD trr Min Typ Max 1.3 5 150 3 Unit V mA mA pF ms
6 2
Document Number 86023 Rev. 2, 24-Jun-98
www.vishay.de FaxBack +1-408-970-5600 1 (4)
BYT40Y
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
300 PR – Reverse Power Dissipation ( mW ) VR = VRRM 250 200 150 100 50 0 25
15779
10 RthJA= 45K/W 100K/W 160K/W PR–Limit @80%VR PR–Limit @100%VR Tj = 150°C 1 Tj = 25°C 0.1
IF – Forward Current ( A ) 150
15777
0.01
0.001 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VF – Forwar...
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