Rectifier diodes ultrafast/ rugged
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
• Low forward volt drop • Fas...
Description
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance
BYQ40EW series
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 40 A IRRM ≤ 0.2 A trr ≤ 30 ns
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ40EW series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave δ = 0.5; Tmb ≤ 110 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 110 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature CONDITIONS BYQ40EW -40 MIN. -150 150 150 150 40 40 300 325 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V...
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