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BYP35A4

Diotec Semiconductor

Silicon Press-Fit-Diodes

BYP 35A05 ... BYP 35A6 BYP 35K05 ... BYP 35K6 Silicon Press-Fit-Diodes High-temperature diodes Silizium-Einpreßdioden Ho...


Diotec Semiconductor

BYP35A4

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Description
BYP 35A05 ... BYP 35A6 BYP 35K05 ... BYP 35K6 Silicon Press-Fit-Diodes High-temperature diodes Silizium-Einpreßdioden Hochtemperaturdioden Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx. – Gewicht ca. Casting compound has UL classification 94V-0 Vergußmasse UL94V-0 klassifiziert Dimensions / Maße in mm 35 A 50…600 V 10 g Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Type / Typ Wire to / Draht an Anode Cathode BYP 35A05 BYP 35A1 BYP 35A2 BYP 35A3 BYP 35A4 BYP 35A6 BYP 35K05 BYP 35K1 BYP 35K2 BYP 35K3 BYP 35K4 BYP 35K6 Repetitive peak reverse voltage Periodische Spitzensperrspanng. VRRM [V] 50 100 200 300 400 600 TC = 150/C f > 15 Hz TA = 25/C TA = 25/C Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 60 120 240 360 480 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t <10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Maximum pressure – Maximaler Einpreßdruck 1 IFAV IFRM IFSM i2t Tj TS 35 A 110 A 1) 360 / 400 A 660 A2s – 50...+215 /C – 50...+215 /C 7 kN 78 ) Max. case temperatu...




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