FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
BYP 301
FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics
Type BYP 301
VRRM
1200V
IFRMS
20A...
Description
BYP 301
FRED Diode Fast recovery epitaxial diode Soft recovery characteristics
Type BYP 301
VRRM
1200V
IFRMS
20A
trr
80ns
Package TO-218 AD
Ordering Code C67047-A2251-A2
Maximum Ratings Parameter Mean forward current Symbol Values 12 Unit A 20 50
IFAV IFRMS IFSM IFRM
110 ∫i2dt 13
TC = 90 °C, D = 0.5
RMS forward current Surge forward current, sine halfwave, aperiodic
Tj = 100 °C, f = 50 Hz
Repetitive peak forward current
Tj = 100 °C, tp ≤ 10 µs i 2t value Tj = 100 °C, tp = 10 ms
Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation
A2s 1200 1200 W 40 -40 ... + 150 -40 ... + 150 ≤ 1.5 ≤ 46 E 40 / 150 / 56 K/W °C V
VRRM VRSM Ptot Tj Tstg RthJC RthJA
-
TC = 90 °C
Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
1
12.96
BYP 301
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit
VF
2.2 1.8 0.01 0.05 0.15 2.75 -
V
IF = 12 A, Tj = 25 °C IF = 12 A, Tj = 100 °C
Reverse current
IR
0.25 -
mA
VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 100 °C VR = 1200 V, Tj = 150 °C
AC Characteristics Reverse recovery charge
Qrr
2.2 -
µC
IF = 12 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C
Peak reverse recovery current
IRRM
35 -
A
IF = 12 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C
Rev...
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