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BYM99

NXP

Ultra fast low-loss controlled avalanche rectifier

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM99 Ultra fast low-loss controlled avalanche rectifie...


NXP

BYM99

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM99 Ultra fast low-loss controlled avalanche rectifier Product specification Supersedes data of June 1994 1996 Feb 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier FEATURES Glass passivated Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack Also available with preformed leads for easy insertion. DESCRIPTION BYM99 Rugged glass SOD64 package, using a high temperature alloyed construction. 2/3 pagek (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current  , This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. CONDITIONS MIN. − − MAX. 600 600 1.8 V V A UNIT Ttp = 50 °C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig 6 Tamb = 60 °C; PCB mounting (see Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 − − 0.8 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 50 °C; see Fig. 4 Tamb = 60 °C; see Fig. 5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched ...




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