Ultra fast low-loss controlled avalanche rectifier
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM99 Ultra fast low-loss controlled avalanche rectifie...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM99 Ultra fast low-loss controlled avalanche rectifier
Product specification Supersedes data of June 1994 1996 Feb 19
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
FEATURES Glass passivated Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack Also available with preformed leads for easy insertion. DESCRIPTION
BYM99
Rugged glass SOD64 package, using a high temperature alloyed construction.
2/3 pagek (Datasheet)
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current
,
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
a
MAM104
Fig.1 Simplified outline (SOD64) and symbol.
CONDITIONS
MIN. − −
MAX. 600 600 1.8 V V A
UNIT
Ttp = 50 °C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig 6 Tamb = 60 °C; PCB mounting (see Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6
−
−
0.8
A
IFRM IFSM
repetitive peak forward current non-repetitive peak forward current
Ttp = 50 °C; see Fig. 4 Tamb = 60 °C; see Fig. 5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched ...
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