Document
MOSFETs Silicon N-channel MOS (U-MOS�-H)
TK4R4P06PL
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers
2. Features
(1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
TK4R4P06PL
DPAK
1: Gate 2: Drain (heatsink) 3: Source
©2017-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2017-04
2021-01-27 Rev.3.0
TK4R4P06PL
4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC)
VDSS
60
V
VGSS
±20
(Tc = 25 �)
(Note 1)
ID
58
A
Drain current (DC) Drain current (pulsed) Power dissipation
(Silicon limit) (Note 1), (Note 2)
ID
(t = 100 µs)
(Note 1)
IDP
(Tc = 25 �)
PD
106
330
87
W
Single-pulse avalanche energy
(Note 3)
EAS
42
mJ
Single-pulse avalanche current Channel temperature Storage temperature
(Note 3)
IAS
Tch
Tstg
58
A
175
�
-55 to 175
�
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
(Tc = 25 �)
Note 1: Ensure that the channel temperature does not exceed 175 �.
Note 2: Limited 58 A by package capability Note 3: VDD = 48 V, Tch = 25 � (initial), L = 10.2 µH, IAS = 58 A
Symbol Rth(ch-c)
Max
Unit
1.72
�/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2017-2021
2
Toshiba Electronic Devices & Storage Corporation
2021-01-27 Rev.3.0
TK4R4P06PL
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 � unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
(Note 4)
IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON)
VGS = ±20 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.5 mA VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 29 A
�
�
±0.1
µA
�
�
10
60
�
�
V
45
�
�
1.5
�
2.5
�
4.8
7.1
mΩ
�
3.4
4.4
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 � unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Ciss Crss Coss rg
tr ton tf toff
VDS = 30 V, VGS = 0 V, f = 1 MHz
� See Fig. 6.2.1
Min Typ. Max Unit
� 3280 �
pF
�
60
�
�
600
�
�
1.7
�
Ω
�
10
�
ns
�
24
�
�
18
�
�
55
�
VDD ≈ 30 V
VGS = 0 V/ 10 V
ID = 29 A RL = 1.03 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 � unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1 Gate-drain charge Gate switch charge Output charge
Symbol
Test Condition
Qg
Qgs1 Qgd QSW Qoss
VDD ≈ 30 V, VGS = 10 V, ID = 29 A VDD ≈ 30 V, VGS = 4.5 V, ID = 29 A VDD ≈ 30 V, VGS = 10 V, ID = 29 A
VDS = 30 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
�
48.2
�
nC
�
23.9
�
�
13.1
�
�
8.6
�
�
15.1
�
�
39
�
©2017-2021
3
Toshiba Electronic Devices & Storage Corporation
2021-01-27 Rev.3.0
TK4R4P06PL
6.4. Source-Drain Characteristics (Ta = 25 � unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed) (Note 5)
IDRP
�
(t = 100 µs)
Diode forward voltage
VDSF
IDR = 58 A, VGS = 0 V
Reverse recovery time Reverse recovery charge
trr
IDR = 14.5 A, VGS = 0 V,
Qrr
-dIDR/dt = 100 A/µs
Note 5: Ensure that the channel temperature does not exceed 175 �.
7. Marking
Min Typ. Max Unit
�
�
330
A
�
.