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TK4R4P06PL Dataheets PDF



Part Number TK4R4P06PL
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TK4R4P06PL DatasheetTK4R4P06PL Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS�-H) TK4R4P06PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal C.

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MOSFETs Silicon N-channel MOS (U-MOS�-H) TK4R4P06PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK4R4P06PL DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-04 2021-01-27 Rev.3.0 TK4R4P06PL 4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) VDSS 60 V VGSS ±20 (Tc = 25 �) (Note 1) ID 58 A Drain current (DC) Drain current (pulsed) Power dissipation (Silicon limit) (Note 1), (Note 2) ID (t = 100 µs) (Note 1) IDP (Tc = 25 �) PD 106 330 87 W Single-pulse avalanche energy (Note 3) EAS 42 mJ Single-pulse avalanche current Channel temperature Storage temperature (Note 3) IAS Tch Tstg 58 A 175 � -55 to 175 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25 �) Note 1: Ensure that the channel temperature does not exceed 175 �. Note 2: Limited 58 A by package capability Note 3: VDD = 48 V, Tch = 25 � (initial), L = 10.2 µH, IAS = 58 A Symbol Rth(ch-c) Max Unit 1.72 �/W Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2017-2021 2 Toshiba Electronic Devices & Storage Corporation 2021-01-27 Rev.3.0 TK4R4P06PL 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 � unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 4) IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) VGS = ±20 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 0.5 mA VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 29 A � � ±0.1 µA � � 10 60 � � V 45 � � 1.5 � 2.5 � 4.8 7.1 mΩ � 3.4 4.4 Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 � unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Ciss Crss Coss rg tr ton tf toff VDS = 30 V, VGS = 0 V, f = 1 MHz � See Fig. 6.2.1 Min Typ. Max Unit � 3280 � pF � 60 � � 600 � � 1.7 � Ω � 10 � ns � 24 � � 18 � � 55 � VDD ≈ 30 V VGS = 0 V/ 10 V ID = 29 A RL = 1.03 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 � unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge Output charge Symbol Test Condition Qg Qgs1 Qgd QSW Qoss VDD ≈ 30 V, VGS = 10 V, ID = 29 A VDD ≈ 30 V, VGS = 4.5 V, ID = 29 A VDD ≈ 30 V, VGS = 10 V, ID = 29 A VDS = 30 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit � 48.2 � nC � 23.9 � � 13.1 � � 8.6 � � 15.1 � � 39 � ©2017-2021 3 Toshiba Electronic Devices & Storage Corporation 2021-01-27 Rev.3.0 TK4R4P06PL 6.4. Source-Drain Characteristics (Ta = 25 � unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (pulsed) (Note 5) IDRP � (t = 100 µs) Diode forward voltage VDSF IDR = 58 A, VGS = 0 V Reverse recovery time Reverse recovery charge trr IDR = 14.5 A, VGS = 0 V, Qrr -dIDR/dt = 100 A/µs Note 5: Ensure that the channel temperature does not exceed 175 �. 7. Marking Min Typ. Max Unit � � 330 A � .


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