Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM56 series Controlled avalanche rectifiers
Product specification Supersedes data of April 1992 1996 May 24
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack • Also available with preformed leads for easy insertion. DESCRIPTION
BYM56 series
This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
Rugged glass package, using a high temperature alloyed construction.
2/3 page k (Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYM56A BYM56B BYM56C BYM56D BYM56E VRWM crest working reverse voltage BYM56A BYM56B BYM56C BYM56D BYM56E VR continuous reverse voltage BYM56A BYM56B BYM56C BYM56D BYM56E IF(AV) average forward current PARAMETER repetitive peak reverse voltage
,
a
MAM104
CONDITIONS
MIN. − − − − − − − − − − − − − − −
MAX. 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 3.5 V V V V V V V V V V V V V V V A
UNIT
Ttp = 60 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 65 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4
−
−
1.4
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax 2
−
80
A
1996 May 24
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYM56 series
SYMBOL ERSM Tstg Tj
PARAMETER non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig.5
CONDITIONS L = 120 mH; Tj = Tj max prior to surge; inductive load switched off
MIN. − −65 −65
MAX. 20 +175 +175
UNIT mJ °C °C
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYM56A BYM56B BYM56C BYM56D BYM56E IR reverse current VR = VRRMmax; see Fig.7 VR = VRRMmax; Tj = 165 °C; see Fig.7 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 VR = 0 V; f = 1 MHz; see Fig.8 CONDITIONS IF = 3 A; Tj = Tj max; see Fig.6 IF = 3 A; see Fig.6 IR = 0.1 mA 225 450 650 900 1100 − − − − − − − − − − 3 − − − − − 1 150 − V V V V V µA µA µs MIN. − − TYP. − − MAX. 0.95 1.15 V V UNIT
Cd
diode capacitance
−
90
−
pF
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 25 75 UNIT K/W K/W
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MBG037
BYM56 series
MBG058
handbook, halfpage
5.0
IF(AV) (A)
handbook, halfpage
2.0
IF(AV) (A)
4.0
1.6
3.0
1.2
2.0
0.8
1.0
0.4
0 0 40 80 120 160 200 Ttp (oC)
0 0 40 80 120 160 200 Tamb (oC)
a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm.
a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGC746
handbook, halfpage
5
handbook, halfpage
200
MSA873
P (W) 4
a=3
2.5
2
1.57 1.42
Tj (°C)
3
100
2
1
A
B
C
D
E
0 0 1 2 3 IF(AV) (A) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 4
0 0 400 800 VR (V) 1200
Fig.4
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Solid line = VR. Dotted line = VRRM; δ = 0.5.
Fig.5
Maximum permissible junction temperature as a function of reverse voltage.
1996 May 24
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYM56 series
MBG046
MGC734
handbook, halfpage
16
3 10 handbook, halfpage
IF (A) 12
IR (µA) 10
2
max 8 10
4
1
0 0
1
VF (V)
2
10 −1
0
40
80
120
160 Tj (oC)
200
Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C.
VR = VRRMmax.
Fig.6
Forward current as a function of forward voltage; maximum values.
Fig.7
Reverse current as a function of junction temperature; maximum values.
10 2 handbook, halfpage
MBG027
handbook, halfpage
50 25
Cd (pF) 7 10 50
2 3 1 10 102 VR (V) 10
3
MGA200
1
f = 1 MHz; Tj = 25 °C. Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 May 24
5.