STD8N80K5

STD8N80K5 Datasheet N-channel 800 V, 0.8 Ω typ., 6 A MDmesh K5 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD8N80K5 800 V 0.95 Ω 6A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected PTOT 110 W Applications Switching applications AM01476v1_tab Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status links STD8N80K5 Product summary Order code STD8N80K5 Marking 8N80K5 Package DPAK Packing Tape and reel DS9561 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current pulsed PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD≤ 6 A, di/dt ≤ 100 A/μs; VDS (peak) ≤ V(BR)DSS 3. VDS ...