AM28F512

FINAL Am28F512 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 10,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from -1 V to VCC +1 V s Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase s Flashrite Programming — 10 µs typical byte-program — One second typical chip program s Command register architecture for microprocessor/microcontroller compatible write interface s On-chip address and data latches s Advanced CMOS flash memory technology — Low cost single transistor memory cell s Automatic write/erase pulse stop timer GENERAL DESCRIPTION The Am28F512 is a 512...