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BZV86-2V6

NXP

Low-voltage stabistors

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZV86 series Low-voltage stabistors Product specification Supersedes data of...


NXP

BZV86-2V6

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZV86 series Low-voltage stabistors Product specification Supersedes data of April 1992 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistors FEATURES Low-voltage stabilization Forward voltage range: 1.4 to 3.2 V Total power dissipation: max. 330 mW Differential resistance range: max. 20 to 35 Ω. APPLICATIONS Power clipping Level shifting Low-voltage regulation Temperature stabilization. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF PARAMETER continuous reverse voltage continuous forward current BZV86-1V4 BZV86-2V0 BZV86-2V6 BZV86-3V2 Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 °C − − − − − CONDITIONS The diodes are type branded. BZV86 series DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. The series consists of four types: BZV86-1V4 to BZV86-3V2. handbook, halfpage k a MAM246 Fig.1 Simplified outline (SOD27; DO-35) and symbol. MIN. − MAX. 10 200 150 125 100 330 +150 150 V UNIT mA mA mA mA mW °C °C −65 − 1996 Mar 21 2 Philips Semiconductors Product specification Low-voltage stabistors ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BZV86-1V4 BZV86-2V0 BZV86-2V6 BZV86-3V2 IR rdif reverse current differential resistance BZV86-1V4 BZV86-2V0 BZV86-2V6 BZV86-3V2 rdif differential resistan...




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