Features
Low Voltage Operation – 2.7V Read
– 5V Program/Erase Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 8K Words (16K bytes) Parameter Blocks
– One 488K Words (976K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Word-By...
