4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Description
Features
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time - 10 seconds Byte-by-Byte Programming - 30 µs/Byte Typical Hardware Data Protection DATA Polling For End Of Program Detection Low Powe...
