Silicon MOSFET
MIP2E2DMY
MOS
(IPD)
■ • •
■ •
■ Ta = 25°C ± 3°C
VD 700
V
VC 10 V
ID 0.585 A
IDP 0.82
A
IC 0.1 A
Tch 150 °C
Ts...
Description
MIP2E2DMY
MOS
(IPD)
■
■
■ Ta = 25°C ± 3°C
VD 700
V
VC 10 V
ID 0.585 A
IDP 0.82
A
IC 0.1 A
Tch 150 °C
Tstg −55 ∼ +150 °C
■
TO-220-A2
1: Control 2: Source 3: Drain
■ : MIP2E2DMY
■
Control 1
Max Duty Clock
Sawtooth
SQ RQ
SQ V-I R Q
: 2010 3
SLB00041BJD
3 Drain MOSFET
2 Source 1
MIP2E2DMY
■ TC = 25°C ± 2°C
PWM /
) *:
* *
fOSC MAXDC GPWM
m
VC = VC(CNT) − 0.2 V VC = VC(CNT) − 0.2 V
IC(SB) IC(OP) VC(ON) VC(OFF) ∆VC TSW / TTIM fTIM IC(CHG)
VC(CNT) * ∆VC(CNT)
VD(MIN)
VC < VC(ON) VC = VC(CNT) − 0.2 V
VC = 0 V VC = 5 V
* * * *
* *
ILIMIT ton(BLK) td(OCL) TOTP VC reset
RDS(ON) IDSS VDSS tr tf
Rth(ch-c) Rth(ch-a)
ID = 0.1 A VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.5 V
90 100 110 kHz
66 69 72
%
11 dB
20 mA/µs
0.05 0.30 0.6 0.7 1.8 2.7 5.1 6.0 6.6 4.1 5.0 5.5 0.5 1.0 1.5
2 0.5 −2.5 −1.9 −1.2 −2.0 −1.2 − 0.5 5.7 6.2 6.6 10 36
mA mA V V V % Hz mA
V mV V
0.45 0.5 0.55 0.25 0.1
130 140 2.3 3.3 4....
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