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BZV49-C9V1 Dataheets PDF



Part Number BZV49-C9V1
Manufacturers NXP
Logo NXP
Description Voltage regulator diodes
Datasheet BZV49-C9V1 DatasheetBZV49-C9V1 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BZV49 series Voltage regulator diodes Product specification Supersedes data of 1996 Oct 28 1999 May 11 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 1 W • Tolerance series: approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. DESCRIPTION Medium-power volta.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BZV49 series Voltage regulator diodes Product specification Supersedes data of 1996 Oct 28 1999 May 11 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 1 W • Tolerance series: approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. DESCRIPTION Medium-power voltage regulator diodes in a SOT89 plastic SMD package. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). 1 Bottom view BZV49 series PINNING PIN 1 2 3 anode anode cathode DESCRIPTION handbook, halfpage 1 2 3 3 2 MAM244 Fig.1 Simplified outline (SOT89) and symbol. MARKING TYPE NUMBER BZV49-C2V4 BZV49-C2V7 BZV49-C3V0 BZV49-C3Y3 BZV49-C3V6 BZV49-C3V9 BZV49-C4V3 BZV49-C4V7 BZV49-C5V1 BZV49-C5V6 MARKING CODE 2Y4 2Y7 3Y0 3Y3 3Y6 3Y9 4Y3 4Y7 5Y1 5Y6 TYPE NUMBER BZV49-C6V2 BZV49-C6V8 BZV49-C7V5 BZV49-C8V2 BZV49-C9V1 BZV49-C10 BZV49-C11 BZV49-C12 BZV49-C13 BZV49-C15 MARKING CODE 6Y2 6Y8 7Y5 8Y2 9Y1 10Y 11Y 12Y 13Y 15Y TYPE NUMBER BZV49-C16 BZV49-C18 BZV49-C20 BZV49-C22 BZV49-C24 BZV49-C27 BZV49-C30 BZV49-C33 BZV49-C36 BZV49-C39 MARKING CODE 16Y 18Y 20Y 22Y 24Y 27Y 30Y 33Y 36Y 39Y TYPE NUMBER BZV49-C43 BZV49-C47 BZV49-C51 BZV49-C56 BZV49-C62 BZV49-C68 BZV49-C75 − − − MARKING CODE 43Y 47Y 51Y 56Y 62Y 68Y 75Y − − − 1999 May 11 2 Philips Semiconductors Product specification Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.3 PARAMETER continuous forward current non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.2 CONDITIONS − MIN. BZV49 series MAX. 250 UNIT mA see Table “Per type” − − −65 − 1 40 +150 150 W W °C °C MAX. 1 UNIT V 1999 May 11 3 1999 May 11 4 Philips Semiconductors Per type Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST DIODE CAP. CURRENT Cd (pF) IZtest (mA) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4.


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