Silicon N-channel MOS FET
This product complies with the RoHS Directive (EU 2002/95/EC).
FC694301
Silicon N-channel MOS FET
For switching circuit...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
FC694301
Silicon N-channel MOS FET
For switching circuits
Overview FC694301 is dual N-channel small signal MOS FET employed small size
surface mounting package.
Features High-speed switching
Low drain-source ON resistance: RDS(on) typ. = 3 W (VGS = 2.5 V) Small size surface mounting package: SSMini6-F3-B
Eco-friendly Halogen-free package
Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
FET1 Gate-source surrender voltage FET2 Drain current
VGSS ID
Peak drain current
IDP
Total power dissipation
PT
Overall Channel temperature
Tch
Storage temperature
Tstg
Rating 30 ±12 100 200 125 150
–55 to +150
Unit V V mA mA mW °C °C
Package Code
SSMini6-F3-B Pin Name
1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2)
4: Source (FET2) 5: Gate (FET2) 6: Dr...
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