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FC694301

Panasonic

Silicon N-channel MOS FET

This product complies with the RoHS Directive (EU 2002/95/EC). FC694301 Silicon N-channel MOS FET For switching circuit...


Panasonic

FC694301

File Download Download FC694301 Datasheet


Description
This product complies with the RoHS Directive (EU 2002/95/EC). FC694301 Silicon N-channel MOS FET For switching circuits  Overview FC694301 is dual N-channel small signal MOS FET employed small size surface mounting package.  Features  High-speed switching  Low drain-source ON resistance: RDS(on) typ. = 3 W (VGS = 2.5 V)  Small size surface mounting package: SSMini6-F3-B  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Drain-source surrender voltage VDSS FET1 Gate-source surrender voltage FET2 Drain current VGSS ID Peak drain current IDP Total power dissipation PT Overall Channel temperature Tch Storage temperature Tstg Rating 30 ±12 100 200 125 150 –55 to +150 Unit V V mA mA mW °C °C  Package  Code SSMini6-F3-B  Pin Name 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) 4: Source (FET2) 5: Gate (FET2) 6: Dr...




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