FC8J3304

This product complies with the RoHS Directive (EU 2002/95/EC). FC8J3304 Silicon N-channel MOS FET For DC-DC converter circuits  Overview FC8J3304 is N-channel dual type small signal MOS FET employed small size surface mounting package.  Features  Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS = 10 V)  High-speed switching: Qg = 2.8 nC  Small size surface mounting package: WMini8-F1  Contributes to miniaturization of sets, mount area reduction  Eco-friendly Halogen-free package  Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current *1 Peak drain current *1, 2 Souce current (Body diode) t = 10 s Power dissipation *1 t = 10 s VDSS VGSS ID IDP IS (BD) PD 33 ±20 5 5.5 20 5 1 1.3 V V A A A W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C ...