Silicon N-channel MOS FET
This product complies with the RoHS Directive (EU 2002/95/EC).
FC8V3303
Silicon N-channel MOS FET
For DC-DC converter c...
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
FC8V3303
Silicon N-channel MOS FET
For DC-DC converter circuits
Overview FC8V3303 is the N-channel dual type MOSFET which is the most suitable for
DC-DC converter circuits.
Features
N-channel dual type Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V) Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm) Contributes to miniaturization of sets, mount area reduction Eco-friendly Halogen-free package
Packaging FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage
Drain current *1
t = 10 s
VDSS VGSS
ID
33 ±20 6.5 8
V V
A
Peak drain current *1, 2 Souce current (Body diode)
Power dissipation *1
t = 10 s
IDP IS
(BD)
PD
26 6.5 1 1.5
A A
W
Channel temperature
Tch 150 °C
Storage tempe...
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