K2919

Ordering number:ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.6 4.2 0.4 0.2 1.2 8.4 10.0 0.7 12 1.0 1.0 2.54 2.54 5.08 10.0 6.0 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25°C Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=480V, VGS=0 Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=1A Static Drain-to-Source On-State Resistance ...