LNJC36X8ARA1

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). type)ce/ maintMeaniantnecRneealtFanytoicprveee/w,alDruidmsmaciciunonrtornuteeisnntnianuItneFecnd(esiittmnyycAl)p(ue,%d)eplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaend LNJC36X8ARA1 Hight Bright Surface Mounting Chip LED ESS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 40 mW Forward current IF 10 mA Pulse forward current * IFP 40 mA Reverse voltage VR 5 V Operating ambient temperature Topr –30 to +85 °C Storage temperature Tstg –40 to +100 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.  Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Luminous intensity * Reverse current Forward voltage Chromaticity coordinates IO IF = 5 mA IR VR = 5 V VF IF = 5 mA x IF = 5 mA y IF = 5 mA Note) *: Measurement tolerance: ±20% IO  IF...