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LNJ936W8CRA Dataheets PDF



Part Number LNJ936W8CRA
Manufacturers Panasonic
Logo Panasonic
Description Hight Bright Surface Mounting Chip LED
Datasheet LNJ936W8CRA DatasheetLNJ936W8CRA Datasheet (PDF)

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). (planed maintMeaniRanetlnaFectoinervatewnylarcupdeem/c,iunDriormsueascnitionntItnFteeinn(nsiatumyneAc)d(ei%t)nyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.d type) LuminousDintensityiIOsM(mcd)caionnttiennuaendce/ LNJ936W8CRA Hight Bright Surface Mounting Chip LED ESS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 65 mW .

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Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). (planed maintMeaniRanetlnaFectoinervatewnylarcupdeem/c,iunDriormsueascnitionntItnFteeinn(nsiatumyneAc)d(ei%t)nyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.d type) LuminousDintensityiIOsM(mcd)caionnttiennuaendce/ LNJ936W8CRA Hight Bright Surface Mounting Chip LED ESS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 65 mW Forward current IF 15 mA Pulse forward current * IFP 55 mA Reverse voltage VR 5 V Operating ambient temperature Topr –30 to +85 °C Storage temperature Tstg –40 to +100 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.  Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Luminous intensity *1 Reverse current Forward voltage Peak emission wavelength Dominant emission wavelength *2 Spectral half band width IO IF = 5 mA IR VR = 5 .


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