Document
Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
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LNJ936W8CRA
Hight Bright Surface Mounting Chip LED
ESS Type
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD 65 mW
Forward current
IF 15 mA
Pulse forward current *
IFP 55 mA
Reverse voltage
VR 5
V
Operating ambient temperature
Topr –30 to +85 °C
Storage temperature
Tstg –40 to +100 °C
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity *1 Reverse current Forward voltage Peak emission wavelength Dominant emission wavelength *2 Spectral half band width
IO IF = 5 mA IR VR = 5 .