Document
MJE13002 / MJE13003
NPN Silicon Power Transistors
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits.
SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC is 290 ns (Typ). • 700V Blocking Capability • SOA and Switching Applications Information.
Absolute Maximum Ratings (T a=25oC)
TO-225AA Package
Symbol
Value MJE13002 MJE13003
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous Collector Current - Peak 1)
Base Current - Continuous Base Current - Peak 1)
Emitter Current - Continuous Emitter Current - Peak 1) Total Power Dissipation @ TA=25oC Derate above 25oC Total Power Dissipation.