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MJE13002 Dataheets PDF



Part Number MJE13002
Manufacturers SEMTECH
Logo SEMTECH
Description NPN Silicon Power Transistors
Datasheet MJE13002 DatasheetMJE13002 Datasheet (PDF)

MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC i.

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MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC is 290 ns (Typ). • 700V Blocking Capability • SOA and Switching Applications Information. Absolute Maximum Ratings (T a=25oC) TO-225AA Package Symbol Value MJE13002 MJE13003 Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Collector Current - Peak 1) Base Current - Continuous Base Current - Peak 1) Emitter Current - Continuous Emitter Current - Peak 1) Total Power Dissipation @ TA=25oC Derate above 25oC Total Power Dissipation.


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