64 Mbit Low Voltage Flash Memories
M58LW064A M58LW064B
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
PRODUCT PREVIEW
s M58LW064A x16 o...
Description
M58LW064A M58LW064B
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
PRODUCT PREVIEW
s M58LW064A x16 organisation, s M58LW064B x16/x32 selectable s MULTI-BIT CELL for HIGH DENSITY and LOW
COST s SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Supply Voltage – VDDQ = 2.7V to 3.6V or 1.8V to 2.5V
Input/Output Supply Voltage s PIPELINED SYNCHRONOUS BURST
INTERFACE s SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read – Asynchronous Random and Latch Enabled
Controlled Read, with Page Read s ACCESS TIME
– Synchronous Burst Read up to 66MHz – Asynchronous Page Mode Read 150/25ns,
Random Read 150ns s PROGRAMMING TIME
– 16 Word or 8 Double-Word Write Buffer – 12us Word effective programming time s MEMORY BLOCKS – 64 Equal blocks of 1 Mbit s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code M58LW064A: 17h – Device Code M58LW064B: 14h
TSOP56 (NF)
86
1
TSOP86 II (NH)
PQFP80 (T)
FBGA
LBGA54 (ZA)
Figure 1. Logic Diagram
VDD VDDQ
22 A1-A22
VPP
32 DQ0...
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