Document
BSH205G2
20 V, P-channel Trench MOSFET
29 April 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 890 mW • AEC-Q101 qualified
3. Applications
• Relay driver • High-speed line driver • High-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-8 -
8V
[1] - - -2.3 A
- 120 170 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, m.