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BSH205G2 Dataheets PDF



Part Number BSH205G2
Manufacturers nexperia
Logo nexperia
Description P-channel Trench MOSFET
Datasheet BSH205G2 DatasheetBSH205G2 Datasheet (PDF)

BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 890 mW • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-sid.

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BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 890 mW • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -2 A; Tj = 25 °C Min Typ Max Unit - - -20 V -8 - 8V [1] - - -2.3 A - 120 170 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, m.


PMV75UP BSH205G2 74AXP1T57


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