Trench gate field-stop IGBT
STGW60H65FB STGWT60H65FB
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Datasheet - production data
TAB
...
Description
STGW60H65FB STGWT60H65FB
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Datasheet - production data
TAB
3 2 1
TO-247
TO-3P
3 2 1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
E (3)
Features
Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution Safe paralleling Low thermal resistance
Applications
Photovoltaic inverters High frequency converters
Description
These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order code STGW60H65FB STGWT60H65FB
Table...
Similar Datasheet