Document
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Datasheet
Trench gate field-stop 650 V, 60 A high speed HB series IGBT
3 2 1
TO-247
TAB
3 2 1
TO-247 long leads
3 2 1
TO-3P
Features
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode
Applications
• Photovoltaic inverters • High-frequency converters
Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status link STGW60H65DFB STGWT60H65DFB STGWA60H65DFB
DS9535 - Rev 8 - July 2019 For further information contact your local STMicroelectronics sales office.
www.st.com
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C IC
Continuous collector current at TC = 100 °C
ICP (2)(3)
Pulsed collector current
Gate-emitter voltage VGE Transient gate-emitter voltage (tP ≤ 10 μs)
Continuous forward current at TC = 25 °C IF
Continuous forward current at TC = 100 °C
IFP (2)(3)
Pulsed forward current
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
TJ Operating junction temperature range
1. Current level is limited by bond wires. 2. Pulse width is limited by maximum junction temperature. 3. Defined by design, not subject to production test.
Symbol RthJC RthJC RthJA
Table 2. Thermal data Parameter
Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient
Value 650 80 (1) 60 240 ±20 ±30 80 (1) 60 240 375 -55 to 150 -55 to 175
Unit V A A A V V A A A W °C °C
Value 0.4 1.14 50
Unit °C/W °C/W °C/W
DS9535 - Rev 8
page 2/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
2 Electrical characteristics
TJ = 25 °C unless otherwise specified
Symbol V(BR)CES
VCE(sat)
VF VGE(th)
ICES IGES
Table 3. Static characteristics
Parameter Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Forward on-voltage Gate threshold voltage Collector cut-off current Gate-emitter leakage current
Test conditions
VGE = 0 V, IC = 2 mA VGE = 15 V, IC = 60 A VGE = 15 V, IC = 60 A, TJ = 125 °C VGE = 15 V, IC = 60 A, TJ = 175 °C IF = 60 A IF = 60 A, TJ = 125 °C IF = 60 A, TJ = 175 °C VCE = VGE, IC = 1 mA VGE = 0 V, VCE = 650 V VCE = 0 V, VGE = ±20 V
Min. 650
5
Typ.
1.60 1.75
1.85 2 1.7 1.6 6
Max. 2
2.6
7 25 ±250
Unit V
V
V V µA nA
Symbol Cies Coes Cres Qg Qge Qgc
Table 4. Dynamic characteristics
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCC = 520 V, IC = 60 A, VGE = 0 to 15 V (see Figure 28. Gate charge test circuit)
Min. -
Typ. 7792 262 158 306 126
58
Max. -
Unit pF pF pF nC nC nC
DS9535 - Rev 8
page 3/21
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
td(on) tr
Turn-on delay time Current rise time
(di/dt)on Turn-on current slope
td(off)
Turn-off delay time
tf Current fall time
Eon (1)
Turn-on switching energy
Eoff (2)
Turn-off switching energy
Ets Total switching energy
td(on) tr
Turn-on delay time Current rise time
(di/dt)on Turn-on current slope
td(off)
Turn-off-delay time
tf Current fall time
Eon (1)
Turn-on switching energy
Eoff (2)
Turn-off switching energy
Ets Total switching energy
1. Including the reverse recovery of the diode. 2. Including the tail of the collector current.
Test conditions
VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V (see Figure 27. Test circuit for inductive load switching)
VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching)
Min. -
Typ. 66 38 1216 210 20 1590 900 2490 59 40 1230 242 147 2860 1255 4115
Max. -
Unit ns ns A/µs ns ns µJ µJ µJ ns ns A/µs ns ns µJ µJ µJ
Symbol trr Qrr Irrm
dIrr/dt
Err trr Qrr Irrm
dIrr/dt
Err
Table 6. Diode switching characteristics (inductive load)
Parameter Reverse recovery time
Reverse recovery charge
Reverse recovery current Peak rate of fall of reverse recovery current during tb Reverse recovery energy
Test conditions
IF = 60 A, VR = 400 V, VGE = 15 V, di/dt = 100 A/µs (see F.