SEMICONDUCTOR
TECHNICAL DATA
MJD32C
MJD32C TRANSISTOR (PNP)
FEA TURES
Designed for General Purpose Amplifier and Low ...
SEMICONDUCTOR
TECHNICAL DATA
MJD32C
MJD32C
TRANSISTOR (
PNP)
FEA TURES
Designed for General Purpose Amplifier and Low Speed Switching Applications Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value
-100 -100
-5 -3 1.25 150 -65-150
Unit
V V V A W ℃ ℃
Q
AI CJ
BD
H FF
123
1 BASE 2 COLLECTOR 3 EMITTER
E
DIM MILLIMETERS
A 6 50 ± 0 2
B 5 60 ± 0 2
C 5 20 ± 0 2
D 1 50 ± 0 2
O
E 2 70 ± 0 2
F 2 30 ± 0 1
H 1 00 MAX
LI J
2 30 ± 0 2 05± 01
L 0 50 ± 0 10 O 16±02
Q 0 95 MAX
D-PAK (TO-252)
ELECTRICA...
