Document
SMD Power Transistor (PNP) MJD32C
SMD Power Transistor (PNP)
Features
• Designed for general purpose amplifier and low speed switching applications • RoHS compliance
Mechanical Data
Case: Terminals:
Weight:
D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams
D-PACK (TO-252)
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MJD32C
Marking Code
MJD32C
VCEO
Collector-Emitter Voltage
100
VCBO
Collector-Base Voltage
100
VEBO
Emitter-Base Voltage
5
IC Collector Current Continuous
3
ICP Collector Current Peak
5
IB Base Current
1
Power Dissipation at TC=25°C
PD
Derate above 25°C
15 0.12
*PD TJ, TSTG
Power Dissipation at TA=25°C
Derate above 25°C Operating and Storage Junction Temperature Range
1.56 0.012 -65 to +150
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Unit
V V V A A A W W/°C W W/.