TIP121F

Shenzhen yecheng technology industry co.,ltd TIP120F,121F,122F (NPN) TIP125F,126F,127F (PNP) DARLINGTON TRANSISTOR FEATURES Medium Power Complementary Silicon Transistors ITO-220 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC RθJA RθJC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature TIP120F TIP125F 60 60 TIP121F TIP126F 80 80 5 5 2 62.5 1.92 150 -55~+150 TIP122F TIP127F 100 100 Unit V V V A W ℃/W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage TIP120F,TIP125F TIP121F,TIP126F TIP122F,TIP127F Collector-emitter breakdown voltage TIP120F,TIP125F TIP121F,TIP126F TIP122F,TIP127F Collector cut-off current TIP120F,TIP125F...