VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky...
VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AC
TMBS ®
ITO-220AC
VT5200
PIN 1 PIN 2
1
CASE
2
TO-263AB
K
VFT5200
PIN 1 PIN 2
TO-262AA K
2 1
A NC
VBT5200
NC K A HEATSINK
VIT5200
NC
A K NC
K
A HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max.
Package
5.0 A 200 V 80 A 0.65 V 150 °C TO-220AC, ITO-220AC, TO-263AB, TO-262AA
Diode variation
Single die
FEATURES
Trench MOS
Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power su...
