NGTG25N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective...
NGTG25N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications.
Features
Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices
Typical Applications
Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES IC
1200
50 25
V A
Pulsed collector current, Tpulse limited by TJmax
Gate−emitter voltage Transient gate−emitter voltage (Tpulse = 5 ms, D < 0.10)
ICM 100 A
VGE
$20
V
±30
Power Dissipation @ TC = 25°C @ TC = 100...