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NGTB50N60S1WG

ON Semiconductor
Part Number NGTB50N60S1WG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effectiv...
Datasheet PDF File NGTB50N60S1WG PDF File

NGTB50N60S1WG
NGTB50N60S1WG

Overview
NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for welding applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • This is a Pb−Free Device Typical Applications • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter volt...


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