IGBT
NGTB50N60L2WG
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Tr...
IGBT
NGTB50N60L2WG
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices
Typical Applications
Motor Drive Inverters Industrial Switching Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter Voltage
Collector Current @ TC = 25°C @ TC = 100°C
Diode Forward Current @ TC = 25°C @ TC = 100°C
Diode Pulsed Current TPULSE Limited by TJ Max
VCES
600
V
IC
A
100
50
IF
A
100
50
IFM
200
A
Pulsed Collector Current, Tpulse Limited by TJmax
Short−circuit Withstand Time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C
Gate−emitter Voltage
Transient Gate−emitter Voltage (TPULSE = 5 ms, D < 0.10)
Power Dissipation @ TC = 25°C @ TC = 100°C
Operating Junction Temperature Range
ICM
200
A
tSC
5
ms
VGE
±20
V
±30
V
PD
W
500
250
TJ
−55 to +175 °C
Storage Temperature Range
Lead temperature for soldering, 1/8″ from case for 5 seconds
Tstg TSLD
−55 to +175 °C
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may ...
