NGTB50N60FWG

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Solar Inverters Uninterruptible Power Supples (UPS) Motor Drives ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 100 50 Pulsed collector current, Tpulse limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C ICM 200 A IF A 100 50 Diode Pulsed Current Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitter voltage Transient Gate−Emitter ...