NGTB45N60S1WG

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices Typical Applications Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 90 45 Diode Forward Current @ TC = 25°C @ TC = 100°C IF A 90 45 Diode Pulsed Current TPULSE Limited by TJ Max Pulsed collector current, Tpulse limited by TJmax Short−circuit withstand time VGE = 15 V, VCE ...