D44H11, D45H11
High Power Bipolar Transistors
Designed for various specific and general purpose application such as; ou...
D44H11, D45H11
High Power Bipolar
Transistors
Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters and many others
Features:
Very low collector saturation voltage Excellent linearity Fast switching
PNP values are negative, observe proper polarity
TO-220
Pin 1. Base
2. Collector 3. Emitter 4. Collector (Case)
Maximum Ratings
Dimensions
A B C D E F G H I J K L M O
Characteristic
Collector - emitter voltage
Collector - base voltage
Emitter - base voltage Collector current - continuous
- peak Base current Total power dissipation at TC = 25°C derate above 25°C
Operating and storage junction temperature range
Thermal Characteristics
Minimum Maximum
14.68
15.31
9.78 10.42
5.01 6.52
13.06
14.62
3.57 4.07
2.42 3.66
1.12 1.36
0.72 0.96
4.22 4.98
1.14 1.38
2.2 2.97
...
